Identifying dominant recombination locations in double‐graded Cu(In<sub>1‐x</sub>Ga<sub>x</sub>)(Se<sub>1‐y</sub>S<sub>y</sub>)<sub>2</sub> solar cells and their impact on the performance at different light intensities
نویسندگان
چکیده
Abstract In this work, the impact of different Cu(In 1‐x Ga x )(Se 1‐y S y ) 2 solar cell structures on shift dominant recombination region at varying light intensities was investigated. A new parameter proposed to account for relative minimum band gap location in a graded absorber. Additionally, influence shunt resistances CIGSSe modeled. Within investigated illumination range, correlations between and parameters as well their temperature dependence were discussed.
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ژورنال
عنوان ژورنال: Progress in Photovoltaics
سال: 2022
ISSN: ['1062-7995', '1099-159X']
DOI: https://doi.org/10.1002/pip.3543